STGPL6NC60DI
STGPL6NC60DI
Артикул:
STGPL6NC60DI
Описание:
STGPL6NC60DI
Характеристики
Manufacturer
STMicroelectronics
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.9 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
14 A
Power Dispation
56 W
Описание
Insulated-gate bipolar transistor-STGPL6NC60DI: Биполярный транзистор с изолированным затвором
В наличии
Характеристики
Manufacturer
STMicroelectronics
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.9 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
14 A
Power Dispation
56 W
Описание
Insulated-gate bipolar transistor-STGPL6NC60DI: Биполярный транзистор с изолированным затвором