STGW10M65DF2
STGW10M65DF2
Артикул:
STGW10M65DF2
Описание:
STGW10M65DF2
Характеристики
Manufacturer
STMicroelectronics
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.55 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
20 A
Power Dispation
115 W
Описание
Insulated-gate bipolar transistor-STGW10M65DF2: Биполярный транзистор с изолированным затвором
В наличии
Характеристики
Manufacturer
STMicroelectronics
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.55 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
20 A
Power Dispation
115 W
Описание
Insulated-gate bipolar transistor-STGW10M65DF2: Биполярный транзистор с изолированным затвором