STGW20NC60VD
STGW20NC60VD
Артикул:
STGW20NC60VD
Описание:
STGW20NC60VD
Характеристики
Manufacturer
STMicroelectronics
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
2.5 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
60 A
Power Dispation
200 W
Описание
Insulated-gate bipolar transistor-STGW20NC60VD: Биполярный транзистор с изолированным затвором
В наличии
Характеристики
Manufacturer
STMicroelectronics
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
2.5 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
60 A
Power Dispation
200 W
Описание
Insulated-gate bipolar transistor-STGW20NC60VD: Биполярный транзистор с изолированным затвором