STGW25H120DF2
STGW25H120DF2
Артикул:
STGW25H120DF2
Описание:
STGW25H120DF2
Характеристики
Manufacturer
STMicroelectronics
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
2.1 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
50 A
Power Dispation
375 W
Описание
Insulated-gate bipolar transistor-STGW25H120DF2: Биполярный транзистор с изолированным затвором
В наличии
Характеристики
Manufacturer
STMicroelectronics
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
2.1 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
50 A
Power Dispation
375 W
Описание
Insulated-gate bipolar transistor-STGW25H120DF2: Биполярный транзистор с изолированным затвором