STGW30H60DFB
STGW30H60DFB
Артикул:
STGW30H60DFB
Описание:
STGW30H60DFB
Характеристики
Manufacturer
STMicroelectronics
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.55 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
60 A
Power Dispation
260 W
Описание
Insulated-gate bipolar transistor-STGW30H60DFB: Биполярный транзистор с изолированным затвором
В наличии
Характеристики
Manufacturer
STMicroelectronics
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.55 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
60 A
Power Dispation
260 W
Описание
Insulated-gate bipolar transistor-STGW30H60DFB: Биполярный транзистор с изолированным затвором