История:
S6B-SEH-2B-M32
STGW30M65DF2
STGW30M65DF2
Артикул:
STGW30M65DF2
Описание:
STGW30M65DF2
Характеристики
Manufacturer
STMicroelectronics
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.55 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
60 A
Power Dispation
258 W
Описание
Insulated-gate bipolar transistor-STGW30M65DF2: Биполярный транзистор с изолированным затвором
В наличии
Характеристики
Manufacturer
STMicroelectronics
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.55 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
60 A
Power Dispation
258 W
Описание
Insulated-gate bipolar transistor-STGW30M65DF2: Биполярный транзистор с изолированным затвором

