STGW40H120F2
STGW40H120F2
Артикул:
STGW40H120F2
Описание:
STGW40H120F2
Характеристики
Manufacturer
STMicroelectronics
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
2.1 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
80 A
Power Dispation
468 W
Описание
Insulated-gate bipolar transistor-STGW40H120F2: Биполярный транзистор с изолированным затвором
В наличии
Характеристики
Manufacturer
STMicroelectronics
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
2.1 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
80 A
Power Dispation
468 W
Описание
Insulated-gate bipolar transistor-STGW40H120F2: Биполярный транзистор с изолированным затвором