STGW40H65DFB
STGW40H65DFB
Артикул:
STGW40H65DFB
Описание:
STGW40H65DFB
Характеристики
Manufacturer
STMicroelectronics
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.8 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
80 A
Power Dispation
283 W
Описание
Insulated-gate bipolar transistor-STGW40H65DFB: Биполярный транзистор с изолированным затвором
В наличии
Характеристики
Manufacturer
STMicroelectronics
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.8 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
80 A
Power Dispation
283 W
Описание
Insulated-gate bipolar transistor-STGW40H65DFB: Биполярный транзистор с изолированным затвором