STGW40V60F
STGW40V60F
Артикул:
STGW40V60F
Описание:
STGW40V60F
Характеристики
Manufacturer
STMicroelectronics
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
2.35 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
80 A
Power Dispation
283 W
Описание
Insulated-gate bipolar transistor-STGW40V60F: Биполярный транзистор с изолированным затвором
В наличии
Характеристики
Manufacturer
STMicroelectronics
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
2.35 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
80 A
Power Dispation
283 W
Описание
Insulated-gate bipolar transistor-STGW40V60F: Биполярный транзистор с изолированным затвором