STGW60H60DLFB
STGW60H60DLFB
Артикул:
STGW60H60DLFB
Описание:
STGW60H60DLFB
Характеристики
Manufacturer
STMicroelectronics
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.6 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
80 A
Power Dispation
375 W
Описание
Insulated-gate bipolar transistor-STGW60H60DLFB: Биполярный транзистор с изолированным затвором
В наличии
Характеристики
Manufacturer
STMicroelectronics
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.6 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
80 A
Power Dispation
375 W
Описание
Insulated-gate bipolar transistor-STGW60H60DLFB: Биполярный транзистор с изолированным затвором