STGW60H65DF
STGW60H65DF
Артикул:
STGW60H65DF
Описание:
STGW60H65DF
Характеристики
Manufacturer
STMicroelectronics
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
2.1 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
120 A
Power Dispation
360 W
Описание
Insulated-gate bipolar transistor-STGW60H65DF: Биполярный транзистор с изолированным затвором
В наличии
Характеристики
Manufacturer
STMicroelectronics
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
2.1 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
120 A
Power Dispation
360 W
Описание
Insulated-gate bipolar transistor-STGW60H65DF: Биполярный транзистор с изолированным затвором