STGW60H65DRF
STGW60H65DRF
Артикул:
STGW60H65DRF
Описание:
STGW60H65DRF
Характеристики
Manufacturer
STMicroelectronics
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.9 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
120 A
Power Dispation
360 W
Описание
Insulated-gate bipolar transistor-STGW60H65DRF: Биполярный транзистор с изолированным затвором
В наличии
Характеристики
Manufacturer
STMicroelectronics
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.9 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
120 A
Power Dispation
360 W
Описание
Insulated-gate bipolar transistor-STGW60H65DRF: Биполярный транзистор с изолированным затвором