История:
R3-28C-02-B
R3-14C-01
PASH-M12A-03P-MM-SL7002
STGW60H65FB
STGW60H65FB
Артикул:
STGW60H65FB
Описание:
STGW60H65FB
Характеристики
Manufacturer
STMicroelectronics
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.6 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
80 A
Power Dispation
375 W
Описание
Insulated-gate bipolar transistor-STGW60H65FB: Биполярный транзистор с изолированным затвором
В наличии
Характеристики
Manufacturer
STMicroelectronics
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.6 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
80 A
Power Dispation
375 W
Описание
Insulated-gate bipolar transistor-STGW60H65FB: Биполярный транзистор с изолированным затвором

