История:
R3-28C-02-B
R3-14C-01
PASH-M12A-03P-MM-SL7002
STGW80H65DFB
STGW80H65DFB
Артикул:
STGW80H65DFB
Описание:
STGW80H65DFB
Характеристики
Manufacturer
STMicroelectronics
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.6 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
120 A
Power Dispation
469 W
Описание
Insulated-gate bipolar transistor-STGW80H65DFB: Биполярный транзистор с изолированным затвором
В наличии
Характеристики
Manufacturer
STMicroelectronics
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.6 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
120 A
Power Dispation
469 W
Описание
Insulated-gate bipolar transistor-STGW80H65DFB: Биполярный транзистор с изолированным затвором

