История:
PASH-M12A-03P-MM-SL7002
STGW80H65FB
STGW80H65FB
Артикул:
STGW80H65FB
Описание:
STGW80H65FB
Характеристики
Manufacturer
STMicroelectronics
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.6 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
120 A
Power Dispation
469 W
Описание
Insulated-gate bipolar transistor-STGW80H65FB: Биполярный транзистор с изолированным затвором
В наличии
Характеристики
Manufacturer
STMicroelectronics
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.6 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
120 A
Power Dispation
469 W
Описание
Insulated-gate bipolar transistor-STGW80H65FB: Биполярный транзистор с изолированным затвором

