История:
SCSH-M23R-12P-MM-SS7000-00A(H)
STGW80V60DF
STGW80V60DF
Артикул:
STGW80V60DF
Описание:
STGW80V60DF
Характеристики
Manufacturer
STMicroelectronics
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.85 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
120 A
Power Dispation
469 W
Описание
Insulated-gate bipolar transistor-STGW80V60DF: Биполярный транзистор с изолированным затвором
В наличии
Характеристики
Manufacturer
STMicroelectronics
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.85 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
120 A
Power Dispation
469 W
Описание
Insulated-gate bipolar transistor-STGW80V60DF: Биполярный транзистор с изолированным затвором

