История:
PM-M8B-05P-MM-SL7B01
5A-SF-0.33
PXV1220S-9DBN6-T
APT75GN60LDQ3G
VS-30TPS12L-M3
TMS5700914APZQQ1
PTGL09AR150M3B51A0
ADCMP601BKSZ-REEL7
BA2903YFVM-CTR
5.0SMDJ15A-Q
S10B-SM-1L.M-M25-PC
P36/22-3D3-A630/N
S10B-SM-4B-PG16-MC
ADCMP608BKSZ-REEL7
058266
PXV1220S-8DBN6-T
APT68GA60LD40
AM4377BZDNA100
TMS5700914APGEQQ1
ZXTP2041FTA
APT40GR120B
STGIPS10K60T
STGW8M120DF3
STGW8M120DF3
Артикул:
STGW8M120DF3
Описание:
STGW8M120DF3
Характеристики
Manufacturer
STMicroelectronics
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
1.85 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
16 A
Power Dispation
167 W
Описание
Insulated-gate bipolar transistor-STGW8M120DF3: Биполярный транзистор с изолированным затвором
В наличии
Характеристики
Manufacturer
STMicroelectronics
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
1.85 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
16 A
Power Dispation
167 W
Описание
Insulated-gate bipolar transistor-STGW8M120DF3: Биполярный транзистор с изолированным затвором

