STGWA15H120DF2
STGWA15H120DF2
Артикул:
STGWA15H120DF2
Описание:
STGWA15H120DF2
Характеристики
Manufacturer
STMicroelectronics
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
2.5 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
30 A
Power Dispation
259 W
Описание
Insulated-gate bipolar transistor-STGWA15H120DF2: Биполярный транзистор с изолированным затвором
В наличии
Характеристики
Manufacturer
STMicroelectronics
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
2.5 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
30 A
Power Dispation
259 W
Описание
Insulated-gate bipolar transistor-STGWA15H120DF2: Биполярный транзистор с изолированным затвором