История:
APT45GP120B2DQ2G
APT35GA90B
STGWA15H120F2
STGWA15H120F2
Артикул:
Описание:
STGWA15H120F2
Характеристики
Manufacturer
STMicroelectronics
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
2.5 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
30 A
Power Dispation
259 W
Описание
Insulated-gate bipolar transistor-STGWA15H120F2: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
STMicroelectronics
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
2.5 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
30 A
Power Dispation
259 W
Описание
Insulated-gate bipolar transistor-STGWA15H120F2: Биполярный транзистор с изолированным затвором

