История:
MCC26-14IO1
STGWA25H120F2
STGWA25H120F2
Артикул:
STGWA25H120F2
Описание:
STGWA25H120F2
Характеристики
Manufacturer
STMicroelectronics
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
2.5 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
50 A
Power Dispation
375 W
Описание
Insulated-gate bipolar transistor-STGWA25H120F2: Биполярный транзистор с изолированным затвором
В наличии
Характеристики
Manufacturer
STMicroelectronics
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
2.5 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
50 A
Power Dispation
375 W
Описание
Insulated-gate bipolar transistor-STGWA25H120F2: Биполярный транзистор с изолированным затвором

