История:
S6B-TEH-2B-PG29
15EDGKA-3.5-02P
MSDM3502
APT41M80B2
APT60GA60JD60
028082
DS1.5-3L-PE
P1500EALAP
S10B-CC-1L.M-PG16
S6B-TEH-2B-M25
APT5010B2FLLG
6MS24017E33W32860NOSA1
APT100GN120JDQ4
APT40GL120JU2
PTGL09AR3R9M3B51B0
S10B-CC-1L.M-M25
P1800EALRP2
TX87/56/13-3E27
6MS30017E43W34404NOSA1
HVSL600021B0H6
S10B-SMH-1L.M-2PG29
STGWA40H120F2
STGWA40H120F2
Артикул:
STGWA40H120F2
Описание:
STGWA40H120F2
Характеристики
Manufacturer
STMicroelectronics
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
2.5 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
80 A
Power Dispation
468 W
Описание
Insulated-gate bipolar transistor-STGWA40H120F2: Биполярный транзистор с изолированным затвором
В наличии
Характеристики
Manufacturer
STMicroelectronics
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
2.5 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
80 A
Power Dispation
468 W
Описание
Insulated-gate bipolar transistor-STGWA40H120F2: Биполярный транзистор с изолированным затвором

