STGWA40H65DFB2
STGWA40H65DFB2
Артикул:
STGWA40H65DFB2
Описание:
STGWA40H65DFB2
Характеристики
Manufacturer
STMicroelectronics
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.55 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
72 A
Power Dispation
230 W
Описание
Insulated-gate bipolar transistor-STGWA40H65DFB2: Биполярный транзистор с изолированным затвором
В наличии
Характеристики
Manufacturer
STMicroelectronics
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.55 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
72 A
Power Dispation
230 W
Описание
Insulated-gate bipolar transistor-STGWA40H65DFB2: Биполярный транзистор с изолированным затвором