STGWA50IH65DF
STGWA50IH65DF
Артикул:
STGWA50IH65DF
Описание:
STGWA50IH65DF
Характеристики
Manufacturer
STMicroelectronics
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.5 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
100 A
Power Dispation
300 W
Описание
Insulated-gate bipolar transistor-STGWA50IH65DF: Биполярный транзистор с изолированным затвором
В наличии
Характеристики
Manufacturer
STMicroelectronics
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.5 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
100 A
Power Dispation
300 W
Описание
Insulated-gate bipolar transistor-STGWA50IH65DF: Биполярный транзистор с изолированным затвором