STGWA50M65DF2
STGWA50M65DF2
Артикул:
STGWA50M65DF2
Описание:
STGWA50M65DF2
Характеристики
Manufacturer
STMicroelectronics
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.65 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
80 A
Power Dispation
375 W
Описание
Insulated-gate bipolar transistor-STGWA50M65DF2: Биполярный транзистор с изолированным затвором
В наличии
Характеристики
Manufacturer
STMicroelectronics
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.65 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
80 A
Power Dispation
375 W
Описание
Insulated-gate bipolar transistor-STGWA50M65DF2: Биполярный транзистор с изолированным затвором