STGWT20H60DF
STGWT20H60DF
Артикул:
STGWT20H60DF
Описание:
STGWT20H60DF
Характеристики
Manufacturer
STMicroelectronics
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
2 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
40 A
Power Dispation
167 W
Описание
Insulated-gate bipolar transistor-STGWT20H60DF: Биполярный транзистор с изолированным затвором
В наличии
Характеристики
Manufacturer
STMicroelectronics
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
2 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
40 A
Power Dispation
167 W
Описание
Insulated-gate bipolar transistor-STGWT20H60DF: Биполярный транзистор с изолированным затвором