STGWT20IH125DF
STGWT20IH125DF
Артикул:
STGWT20IH125DF
Описание:
STGWT20IH125DF
Характеристики
Manufacturer
STMicroelectronics
Collector-Emitter Voltage
1.25 kV
Collector-Emitter Saturation Voltage
2.55 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
40 A
Power Dispation
259 W
Описание
Insulated-gate bipolar transistor-STGWT20IH125DF: Биполярный транзистор с изолированным затвором
В наличии
Характеристики
Manufacturer
STMicroelectronics
Collector-Emitter Voltage
1.25 kV
Collector-Emitter Saturation Voltage
2.55 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
40 A
Power Dispation
259 W
Описание
Insulated-gate bipolar transistor-STGWT20IH125DF: Биполярный транзистор с изолированным затвором