STGWT28IH125DF
STGWT28IH125DF
Артикул:
STGWT28IH125DF
Описание:
STGWT28IH125DF
Характеристики
Manufacturer
STMicroelectronics
Collector-Emitter Voltage
1.25 kV
Collector-Emitter Saturation Voltage
2.65 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
60 A
Power Dispation
375 W
Описание
Insulated-gate bipolar transistor-STGWT28IH125DF: Биполярный транзистор с изолированным затвором
В наличии
Характеристики
Manufacturer
STMicroelectronics
Collector-Emitter Voltage
1.25 kV
Collector-Emitter Saturation Voltage
2.65 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
60 A
Power Dispation
375 W
Описание
Insulated-gate bipolar transistor-STGWT28IH125DF: Биполярный транзистор с изолированным затвором