STGWT30H65FB
STGWT30H65FB
Артикул:
STGWT30H65FB
Описание:
STGWT30H65FB
Характеристики
Manufacturer
STMicroelectronics
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.75 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
30 A
Power Dispation
260 W
Описание
Insulated-gate bipolar transistor-STGWT30H65FB: Биполярный транзистор с изолированным затвором
В наличии
Характеристики
Manufacturer
STMicroelectronics
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.75 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
30 A
Power Dispation
260 W
Описание
Insulated-gate bipolar transistor-STGWT30H65FB: Биполярный транзистор с изолированным затвором