STGWT30V60F
STGWT30V60F
Артикул:
STGWT30V60F
Описание:
STGWT30V60F
Характеристики
Manufacturer
STMicroelectronics
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
2.3 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
60 A
Power Dispation
260 W
Описание
Insulated-gate bipolar transistor-STGWT30V60F: Биполярный транзистор с изолированным затвором
В наличии
Характеристики
Manufacturer
STMicroelectronics
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
2.3 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
60 A
Power Dispation
260 W
Описание
Insulated-gate bipolar transistor-STGWT30V60F: Биполярный транзистор с изолированным затвором