STGWT40V60DF
STGWT40V60DF
Артикул:
STGWT40V60DF
Описание:
STGWT40V60DF
Характеристики
Manufacturer
STMicroelectronics
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
2.35 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
80 A
Power Dispation
283 W
Описание
Insulated-gate bipolar transistor-STGWT40V60DF: Биполярный транзистор с изолированным затвором
В наличии
Характеристики
Manufacturer
STMicroelectronics
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
2.35 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
80 A
Power Dispation
283 W
Описание
Insulated-gate bipolar transistor-STGWT40V60DF: Биполярный транзистор с изолированным затвором