STGWT80V60F
STGWT80V60F
Артикул:
Описание:
STGWT80V60F
Характеристики
Manufacturer
STMicroelectronics
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.85 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
120 A
Power Dispation
469 W
Описание
Insulated-gate bipolar transistor-STGWT80V60F: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
STMicroelectronics
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.85 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
120 A
Power Dispation
469 W
Описание
Insulated-gate bipolar transistor-STGWT80V60F: Биполярный транзистор с изолированным затвором