История:
CS22-08IO1M
MEDC-T-150A-V-5.0M
STGYA120M65DF2
STGYA120M65DF2
Артикул:
STGYA120M65DF2
Описание:
STGYA120M65DF2
Характеристики
Manufacturer
STMicroelectronics
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.65 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
160 A
Power Dispation
625 W
Описание
Insulated-gate bipolar transistor-STGYA120M65DF2: Биполярный транзистор с изолированным затвором
В наличии
Характеристики
Manufacturer
STMicroelectronics
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.65 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
160 A
Power Dispation
625 W
Описание
Insulated-gate bipolar transistor-STGYA120M65DF2: Биполярный транзистор с изолированным затвором

