STGYA120M65DF2AG
STGYA120M65DF2AG
Артикул:
STGYA120M65DF2AG
Описание:
STGYA120M65DF2AG
Характеристики
Manufacturer
STMicroelectronics
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.65 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
160 A
Power Dispation
625 W
Описание
Insulated-gate bipolar transistor-STGYA120M65DF2AG: Биполярный транзистор с изолированным затвором
В наличии
Характеристики
Manufacturer
STMicroelectronics
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.65 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
160 A
Power Dispation
625 W
Описание
Insulated-gate bipolar transistor-STGYA120M65DF2AG: Биполярный транзистор с изолированным затвором