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Bipolar Transistors - BJT
ZHB6718TA Diodes Incorporated
ZHB6718TA Diodes Incorporated
ZHB6718TA Diodes Incorporated
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Артикул:
Производитель:
Diodes Incorporated
Описание:
ZHB6718TA Diodes Incorporated
Характеристики
Maximum Operating Temperature
+ 150 C
Manufacturer
Diodes Incorporated
Package/Case
SM-8
Transistor Polarity
NPN, PNP
Collector- Emitter Voltage VCEO Max
20 V
Collector- Base Voltage VCBO
20 V
Emitter- Base Voltage VEBO
5 V
Collector-Emitter Saturation Voltage
130 mV
Gain Bandwidth Product fT
140 MHz
Pd - Power Dissipation
2000 mW
Minimum Operating Temperature
- 55 C
Brand
Diodes Incorporated
Configuration
Quad
Continuous Collector Current
2.5 A
DC Collector/Base Gain hFE Min
200 at 10 mA, 2 V at NPN, 300 at 100 mA, 2 V at NPN, 200 at 2 A, 2 V at NPN, 300 at 10 mA, 2 V at PNP, 300 at 100 mA, 2 V at PNP, 150 at 2 A, 2 V at PNP, 35 at 4 A, 2 V at PNP
DC Current Gain hFE Max
200
Factory Pack Quantity
1000
Height
1.6 mm
Length
6.7 mm
Maximum DC Collector Current
2.5 A
Mounting Style
SMD/SMT
Packaging
Reel
Product Category
Bipolar Transistors - BJT
Product Type
BJTs - Bipolar Transistors
RoHS
Details
Series
ZHB6718
Subcategory
Transistors
Technology
Si
Unit Weight
1 g
Width
3.7 mm
Описание
Биполярный транзистор ZHB6718TA Diodes Incorporated
В каталоге Components.by представлен электронный компонент ZHB6718TA Diodes Incorporated . Для уточнения цены, сроков поставки или приобретения электронного компонента с артикулом ZHB6718TA , воспользуйтесь формой обратной связи или свяжитесь с нами по телефону.
Характеристики
Maximum Operating Temperature
+ 150 C
Manufacturer
Diodes Incorporated
Package/Case
SM-8
Transistor Polarity
NPN, PNP
Collector- Emitter Voltage VCEO Max
20 V
Collector- Base Voltage VCBO
20 V
Emitter- Base Voltage VEBO
5 V
Collector-Emitter Saturation Voltage
130 mV
Gain Bandwidth Product fT
140 MHz
Pd - Power Dissipation
2000 mW
Minimum Operating Temperature
- 55 C
Brand
Diodes Incorporated
Configuration
Quad
Continuous Collector Current
2.5 A
DC Collector/Base Gain hFE Min
200 at 10 mA, 2 V at NPN, 300 at 100 mA, 2 V at NPN, 200 at 2 A, 2 V at NPN, 300 at 10 mA, 2 V at PNP, 300 at 100 mA, 2 V at PNP, 150 at 2 A, 2 V at PNP, 35 at 4 A, 2 V at PNP
DC Current Gain hFE Max
200
Factory Pack Quantity
1000
Height
1.6 mm
Length
6.7 mm
Maximum DC Collector Current
2.5 A
Mounting Style
SMD/SMT
Packaging
Reel
Product Category
Bipolar Transistors - BJT
Product Type
BJTs - Bipolar Transistors
RoHS
Details
Series
ZHB6718
Subcategory
Transistors
Technology
Si
Unit Weight
1 g
Width
3.7 mm
Описание
Биполярный транзистор ZHB6718TA Diodes Incorporated
В каталоге Components.by представлен электронный компонент ZHB6718TA Diodes Incorporated . Для уточнения цены, сроков поставки или приобретения электронного компонента с артикулом ZHB6718TA , воспользуйтесь формой обратной связи или свяжитесь с нами по телефону.