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Транзисторы
Bipolar Transistors - Pre-Biased
ACX114EUQ-13R
ACX114EUQ-13R
ACX114EUQ-13R
Характеристики
Manufacturer
Diodes Incorporated
Transistor Polarity
NPN, PNP
DC Collector/Base Gain hFE Min
30
Maximum Operating Frequency
250 MHz
Collector- Emitter Voltage VCEO Max
50 V, - 50 V
Continuous Collector Current
50 mA
Peak DC Collector Current
100 mA, - 100 mA
Pd - Power Dissipation
270 mW
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Package/Case
SOT-363-6
Описание
ACX114EUQ-13R Биполярный транзистор - ACX114EUQ-13R
Скачать datasheet
В наличии
Характеристики
Manufacturer
Diodes Incorporated
Transistor Polarity
NPN, PNP
DC Collector/Base Gain hFE Min
30
Maximum Operating Frequency
250 MHz
Collector- Emitter Voltage VCEO Max
50 V, - 50 V
Continuous Collector Current
50 mA
Peak DC Collector Current
100 mA, - 100 mA
Pd - Power Dissipation
270 mW
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Package/Case
SOT-363-6
Описание
ACX114EUQ-13R Биполярный транзистор - ACX114EUQ-13R
Скачать datasheet