История:
TUB4.1/2/20-3C90
EC41/19/12-3C94
T58/41/18-3C90
2N2329 TIN/LEAD
EC35/17/10-3C91-G500
EC35/17/10-3C94-G500
AS32 0R536-100
AS32 1R036-100
T102/66/15-3C90
EC35/17/10-3C91-G1000
EC35/17/10-3C94-G1000
AS32 0R530-100
TUB3.5/1.3/7.5-4B1
TUB3.5/1.3/7.5-3B1
AS32 5R020
0402ESDA-AEC1
EC41/19/12-3C94-G500
EC41/19/12-3C91-G500
PM87/70-3C94-A1500
AS32 2R025
AS35 3R030
ACX114EUQ-7R
ACX114EUQ-7R
Характеристики
Manufacturer
Diodes Incorporated
Transistor Polarity
NPN, PNP
DC Collector/Base Gain hFE Min
30
Maximum Operating Frequency
250 MHz
Collector- Emitter Voltage VCEO Max
50 V, - 50 V
Continuous Collector Current
50 mA
Peak DC Collector Current
100 mA, - 100 mA
Pd - Power Dissipation
270 mW
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Package/Case
SOT-363-6
Описание
ACX114EUQ-7R Биполярный транзистор - ACX114EUQ-7R
Скачать datasheet
В наличии
Характеристики
Manufacturer
Diodes Incorporated
Transistor Polarity
NPN, PNP
DC Collector/Base Gain hFE Min
30
Maximum Operating Frequency
250 MHz
Collector- Emitter Voltage VCEO Max
50 V, - 50 V
Continuous Collector Current
50 mA
Peak DC Collector Current
100 mA, - 100 mA
Pd - Power Dissipation
270 mW
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Package/Case
SOT-363-6
Описание
ACX114EUQ-7R Биполярный транзистор - ACX114EUQ-7R
Скачать datasheet

