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Транзисторы
Bipolar Transistors - Pre-Biased
BCR 10PN H6327
BCR 10PN H6327
BCR 10PN H6327
Характеристики
Manufacturer
Infineon Technologies
Transistor Polarity
NPN, PNP
DC Collector/Base Gain hFE Min
30
Collector- Emitter Voltage VCEO Max
50 V
Continuous Collector Current
100 mA
Peak DC Collector Current
100 mA
Pd - Power Dissipation
250 mW
Maximum Operating Temperature
+ 150 C
Package/Case
SOT-363-6
Описание
BCR 10PN H6327 Биполярный транзистор - BCR 10PN H6327
Скачать datasheet
В наличии
Характеристики
Manufacturer
Infineon Technologies
Transistor Polarity
NPN, PNP
DC Collector/Base Gain hFE Min
30
Collector- Emitter Voltage VCEO Max
50 V
Continuous Collector Current
100 mA
Peak DC Collector Current
100 mA
Pd - Power Dissipation
250 mW
Maximum Operating Temperature
+ 150 C
Package/Case
SOT-363-6
Описание
BCR 10PN H6327 Биполярный транзистор - BCR 10PN H6327
Скачать datasheet

