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Транзисторы
Bipolar Transistors - Pre-Biased
BCR 555 E6433
BCR 555 E6433
BCR 555 E6433
Характеристики
Manufacturer
Infineon Technologies
Transistor Polarity
PNP
DC Collector/Base Gain hFE Min
70
Collector- Emitter Voltage VCEO Max
50 V
Continuous Collector Current
500 mA
Peak DC Collector Current
500 mA
Pd - Power Dissipation
330 mW
Minimum Operating Temperature
- 65 C
Maximum Operating Temperature
+ 150 C
Package/Case
SOT-23-3
Описание
BCR 555 E6433 Биполярный транзистор - BCR 555 E6433
Скачать datasheet
В наличии
Характеристики
Manufacturer
Infineon Technologies
Transistor Polarity
PNP
DC Collector/Base Gain hFE Min
70
Collector- Emitter Voltage VCEO Max
50 V
Continuous Collector Current
500 mA
Peak DC Collector Current
500 mA
Pd - Power Dissipation
330 mW
Minimum Operating Temperature
- 65 C
Maximum Operating Temperature
+ 150 C
Package/Case
SOT-23-3
Описание
BCR 555 E6433 Биполярный транзистор - BCR 555 E6433
Скачать datasheet

