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Bipolar Transistors - Pre-Biased
BCR133E6327XT
BCR133E6327XT
BCR133E6327XT
Характеристики
Manufacturer
Infineon Technologies
Transistor Polarity
NPN
DC Collector/Base Gain hFE Min
30
Collector- Emitter Voltage VCEO Max
50 V
Continuous Collector Current
100 mA
Pd - Power Dissipation
200 mW
Maximum Operating Temperature
+ 150 C
Package/Case
SOT-23
Описание
BCR133E6327XT Биполярный транзистор - BCR133E6327XT
Скачать datasheet
В наличии
Характеристики
Manufacturer
Infineon Technologies
Transistor Polarity
NPN
DC Collector/Base Gain hFE Min
30
Collector- Emitter Voltage VCEO Max
50 V
Continuous Collector Current
100 mA
Pd - Power Dissipation
200 mW
Maximum Operating Temperature
+ 150 C
Package/Case
SOT-23
Описание
BCR133E6327XT Биполярный транзистор - BCR133E6327XT
Скачать datasheet