DRDNB16W-7
DRDNB16W-7
Характеристики
Manufacturer
Diodes Incorporated
Transistor Polarity
NPN
DC Collector/Base Gain hFE Min
56
Collector- Emitter Voltage VCEO Max
18 V
Continuous Collector Current
600 mA
Peak DC Collector Current
600 mA
Pd - Power Dissipation
200 mW
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Package/Case
SOT-363-6
Описание
DRDNB16W-7 Биполярный транзистор - DRDNB16W-7
Скачать datasheet
В наличии
Характеристики
Manufacturer
Diodes Incorporated
Transistor Polarity
NPN
DC Collector/Base Gain hFE Min
56
Collector- Emitter Voltage VCEO Max
18 V
Continuous Collector Current
600 mA
Peak DC Collector Current
600 mA
Pd - Power Dissipation
200 mW
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Package/Case
SOT-363-6
Описание
DRDNB16W-7 Биполярный транзистор - DRDNB16W-7
Скачать datasheet

