DTA014EEBTL
DTA014EEBTL
Характеристики
Manufacturer
ROHM Semiconductor
Transistor Polarity
PNP
DC Collector/Base Gain hFE Min
35
Maximum Operating Frequency
250 MHz
Collector- Emitter Voltage VCEO Max
- 150 mV
Continuous Collector Current
- 100 mA
Peak DC Collector Current
- 100 mA
Pd - Power Dissipation
150 mW
Maximum Operating Temperature
+ 150 C
Package/Case
EMT-3F-3
Описание
DTA014EEBTL Биполярный транзистор - DTA014EEBTL
Скачать datasheet
В наличии
Характеристики
Manufacturer
ROHM Semiconductor
Transistor Polarity
PNP
DC Collector/Base Gain hFE Min
35
Maximum Operating Frequency
250 MHz
Collector- Emitter Voltage VCEO Max
- 150 mV
Continuous Collector Current
- 100 mA
Peak DC Collector Current
- 100 mA
Pd - Power Dissipation
150 mW
Maximum Operating Temperature
+ 150 C
Package/Case
EMT-3F-3
Описание
DTA014EEBTL Биполярный транзистор - DTA014EEBTL
Скачать datasheet

