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Транзисторы
Bipolar Transistors - Pre-Biased
DTA114WUAT106
DTA114WUAT106
DTA114WUAT106
Характеристики
Manufacturer
ROHM Semiconductor
Transistor Polarity
PNP
DC Collector/Base Gain hFE Min
24
Collector- Emitter Voltage VCEO Max
- 50 V
Continuous Collector Current
- 100 mA
Peak DC Collector Current
100 mA
Pd - Power Dissipation
200 mW
Maximum Operating Temperature
+ 150 C
Package/Case
UMT-3
Описание
DTA114WUAT106 Биполярный транзистор - DTA114WUAT106
Скачать datasheet
В наличии
Характеристики
Manufacturer
ROHM Semiconductor
Transistor Polarity
PNP
DC Collector/Base Gain hFE Min
24
Collector- Emitter Voltage VCEO Max
- 50 V
Continuous Collector Current
- 100 mA
Peak DC Collector Current
100 mA
Pd - Power Dissipation
200 mW
Maximum Operating Temperature
+ 150 C
Package/Case
UMT-3
Описание
DTA114WUAT106 Биполярный транзистор - DTA114WUAT106
Скачать datasheet