DTA123EEBTL
DTA123EEBTL
Характеристики
Manufacturer
ROHM Semiconductor
Transistor Polarity
PNP
DC Collector/Base Gain hFE Min
20
Maximum Operating Frequency
250 MHz
Collector- Emitter Voltage VCEO Max
- 50 V
Continuous Collector Current
- 100 mA
Peak DC Collector Current
-
Pd - Power Dissipation
150 mW
Maximum Operating Temperature
+ 150 C
Package/Case
SOT-416FL-3
Описание
DTA123EEBTL Биполярный транзистор - DTA123EEBTL
Скачать datasheet
В наличии
Характеристики
Manufacturer
ROHM Semiconductor
Transistor Polarity
PNP
DC Collector/Base Gain hFE Min
20
Maximum Operating Frequency
250 MHz
Collector- Emitter Voltage VCEO Max
- 50 V
Continuous Collector Current
- 100 mA
Peak DC Collector Current
-
Pd - Power Dissipation
150 mW
Maximum Operating Temperature
+ 150 C
Package/Case
SOT-416FL-3
Описание
DTA123EEBTL Биполярный транзистор - DTA123EEBTL
Скачать datasheet