DTB114ECT116
DTB114ECT116
Характеристики
Manufacturer
ROHM Semiconductor
Transistor Polarity
PNP
DC Collector/Base Gain hFE Min
56
Maximum Operating Frequency
200 MHz
Collector- Emitter Voltage VCEO Max
- 50 V
Continuous Collector Current
- 500 mA
Peak DC Collector Current
- 500 mA
Pd - Power Dissipation
200 mW
Maximum Operating Temperature
+ 150 C
Package/Case
SOT-23-3
Описание
DTB114ECT116 Биполярный транзистор - DTB114ECT116
Скачать datasheet
Характеристики
Manufacturer
ROHM Semiconductor
Transistor Polarity
PNP
DC Collector/Base Gain hFE Min
56
Maximum Operating Frequency
200 MHz
Collector- Emitter Voltage VCEO Max
- 50 V
Continuous Collector Current
- 500 mA
Peak DC Collector Current
- 500 mA
Pd - Power Dissipation
200 mW
Maximum Operating Temperature
+ 150 C
Package/Case
SOT-23-3
Описание
DTB114ECT116 Биполярный транзистор - DTB114ECT116
Скачать datasheet

