DTB123TKT146
DTB123TKT146
Характеристики
Manufacturer
ROHM Semiconductor
Transistor Polarity
PNP
DC Collector/Base Gain hFE Min
100
Collector- Emitter Voltage VCEO Max
- 50 V
Continuous Collector Current
- 500 mA
Peak DC Collector Current
- 500 mA
Pd - Power Dissipation
200 mW
Maximum Operating Temperature
+ 150 C
Package/Case
SC-59-3
Описание
DTB123TKT146 Биполярный транзистор - DTB123TKT146
Скачать datasheet
Характеристики
Manufacturer
ROHM Semiconductor
Transistor Polarity
PNP
DC Collector/Base Gain hFE Min
100
Collector- Emitter Voltage VCEO Max
- 50 V
Continuous Collector Current
- 500 mA
Peak DC Collector Current
- 500 mA
Pd - Power Dissipation
200 mW
Maximum Operating Temperature
+ 150 C
Package/Case
SC-59-3
Описание
DTB123TKT146 Биполярный транзистор - DTB123TKT146
Скачать datasheet

