История:
LTC4367HMS8
LTC4366HTS8-2
DTC114EEBTL
DTC114EEBTL
Характеристики
Manufacturer
ROHM Semiconductor
Transistor Polarity
NPN
DC Collector/Base Gain hFE Min
30
Collector- Emitter Voltage VCEO Max
50 V
Continuous Collector Current
100 mA
Pd - Power Dissipation
150 mW
Maximum Operating Temperature
+ 150 C
Package/Case
EMT-3
Описание
DTC114EEBTL Биполярный транзистор - DTC114EEBTL
Скачать datasheet
Характеристики
Manufacturer
ROHM Semiconductor
Transistor Polarity
NPN
DC Collector/Base Gain hFE Min
30
Collector- Emitter Voltage VCEO Max
50 V
Continuous Collector Current
100 mA
Pd - Power Dissipation
150 mW
Maximum Operating Temperature
+ 150 C
Package/Case
EMT-3
Описание
DTC114EEBTL Биполярный транзистор - DTC114EEBTL
Скачать datasheet

