DTC114TET1G
DTC114TET1G
Характеристики
Manufacturer
ON Semiconductor
Transistor Polarity
NPN
DC Collector/Base Gain hFE Min
160
Collector- Emitter Voltage VCEO Max
50 V
Continuous Collector Current
100 mA
Peak DC Collector Current
100 mA
Pd - Power Dissipation
200 mW
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Package/Case
SOT-416-3
Описание
DTC114TET1G Биполярный транзистор - DTC114TET1G
Скачать datasheet
Характеристики
Manufacturer
ON Semiconductor
Transistor Polarity
NPN
DC Collector/Base Gain hFE Min
160
Collector- Emitter Voltage VCEO Max
50 V
Continuous Collector Current
100 mA
Peak DC Collector Current
100 mA
Pd - Power Dissipation
200 mW
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Package/Case
SOT-416-3
Описание
DTC114TET1G Биполярный транзистор - DTC114TET1G
Скачать datasheet