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Транзисторы
Bipolar Transistors - Pre-Biased
DTC114TU3HZGT106
DTC114TU3HZGT106
DTC114TU3HZGT106
Характеристики
Manufacturer
ROHM Semiconductor
Transistor Polarity
NPN
DC Collector/Base Gain hFE Min
100
Maximum Operating Frequency
250 MHz
Collector- Emitter Voltage VCEO Max
50 V
Continuous Collector Current
100 mA
Peak DC Collector Current
-
Pd - Power Dissipation
200 mW
Maximum Operating Temperature
+ 150 C
Package/Case
SOT-323-3
Описание
DTC114TU3HZGT106 Биполярный транзистор - DTC114TU3HZGT106
Скачать datasheet
Характеристики
Manufacturer
ROHM Semiconductor
Transistor Polarity
NPN
DC Collector/Base Gain hFE Min
100
Maximum Operating Frequency
250 MHz
Collector- Emitter Voltage VCEO Max
50 V
Continuous Collector Current
100 mA
Peak DC Collector Current
-
Pd - Power Dissipation
200 mW
Maximum Operating Temperature
+ 150 C
Package/Case
SOT-323-3
Описание
DTC114TU3HZGT106 Биполярный транзистор - DTC114TU3HZGT106
Скачать datasheet