DTC123EM3T5G
DTC123EM3T5G
Характеристики
Manufacturer
ON Semiconductor
Transistor Polarity
NPN
DC Collector/Base Gain hFE Min
8, 15
Collector- Emitter Voltage VCEO Max
50 V
Continuous Collector Current
0.1 A
Peak DC Collector Current
100 mA
Pd - Power Dissipation
260 mW
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Package/Case
SOT-723-3
Описание
DTC123EM3T5G Биполярный транзистор - DTC123EM3T5G
Скачать datasheet
Характеристики
Manufacturer
ON Semiconductor
Transistor Polarity
NPN
DC Collector/Base Gain hFE Min
8, 15
Collector- Emitter Voltage VCEO Max
50 V
Continuous Collector Current
0.1 A
Peak DC Collector Current
100 mA
Pd - Power Dissipation
260 mW
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Package/Case
SOT-723-3
Описание
DTC123EM3T5G Биполярный транзистор - DTC123EM3T5G
Скачать datasheet