DTC123JET1G
DTC123JET1G
Характеристики
Manufacturer
ON Semiconductor
Transistor Polarity
NPN
DC Collector/Base Gain hFE Min
80
Collector- Emitter Voltage VCEO Max
50 V
Continuous Collector Current
0.1 A
Peak DC Collector Current
100 mA
Pd - Power Dissipation
200 mW
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Package/Case
SC-75-3
Описание
DTC123JET1G Биполярный транзистор - DTC123JET1G
Скачать datasheet
Характеристики
Manufacturer
ON Semiconductor
Transistor Polarity
NPN
DC Collector/Base Gain hFE Min
80
Collector- Emitter Voltage VCEO Max
50 V
Continuous Collector Current
0.1 A
Peak DC Collector Current
100 mA
Pd - Power Dissipation
200 mW
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Package/Case
SC-75-3
Описание
DTC123JET1G Биполярный транзистор - DTC123JET1G
Скачать datasheet